Inchange Semiconductor 2SD2633
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD2633 |
|---|---|
| Datasheet | 2SD2633 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High DC Current Gain- : hFE = 2000(Min)@ IC= 6A●Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min)
●Low Collector-Emitter Saturation Voltage- : VCE(sat) =1.5V(Max)@ IC= 6A
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for general purpose amplifier and low speed switching applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A IB Base Current Collector Power Dissipation PC TC=25℃ Collector Power Dissipation Ta=25℃ Tj Junction Temperature 1 A 35 W 2 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SD2633 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA, IB= 0 V...