Datasheet Details
| Part number | 2SD2901 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.78 KB |
| Description | NPN Transistor |
| Datasheet | 2SD2901-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor 2SD2901.
| Part number | 2SD2901 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.78 KB |
| Description | NPN Transistor |
| Datasheet | 2SD2901-INCHANGE.pdf |
|
|
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 900V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM PC TJ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current- Continuous Collector Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature 1600 V 900 V 5 V 8 A 30 A 60 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.08 ℃/W isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A;
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