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isc Silicon NPN Power Transistor
2SD2901
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 900V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in horizontal deflection circuits of
color TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO VCEO VEBO
IC ICM PC TJ
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current- Continuous Collector Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature
1600
V
900
V
5
V
8
A
30
A
60
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 2.
2SD2901 Datasheet
