Datasheet Details
| Part number | 2SD331 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.55 KB |
| Description | NPN Transistor |
| Datasheet | 2SD331-INCHANGE.pdf |
|
|
Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD331.
| Part number | 2SD331 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.55 KB |
| Description | NPN Transistor |
| Datasheet | 2SD331-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 2.0A ·plement to Type 2SB515 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Especially suited for use in output stage of 10W AF power amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 1.75 W 20 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD331 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD331 | Transistor | Sanyo Semicon Device |
| Part Number | Description |
|---|---|
| 2SD330 | NPN Transistor |
| 2SD334 | NPN Transistor |
| 2SD338 | NPN Transistor |
| 2SD339 | NPN Transistor |
| 2SD310 | NPN Transistor |
| 2SD312 | NPN Transistor |
| 2SD313 | NPN Transistor |
| 2SD314 | NPN Transistor |
| 2SD315 | NPN Transistor |
| 2SD316 | NPN Transistor |