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2SD414 - NPN Transistor

General Description

With TO-126packaging Excellent linearity of hFE Low collector-to-emitter saturation voltage Fast switching speed Complementary to 2SB548

performance and reliable operation.

Relay drivers, high-speed inve

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isc Silicon NPN Power Transistor DESCRIPTION ·With TO-126packaging ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed ·Complementary to 2SB548 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Relay drivers, high-speed inverters , converters and Other general high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.8 A ICP Collector Current-Pulse 1.5 A PC Collector Power Dissipation 1.0 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD414 isc website：www.