Datasheet Details
| Part number | 2SD414 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.35 KB |
| Description | NPN Transistor |
| Datasheet | 2SD414-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD414 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.35 KB |
| Description | NPN Transistor |
| Datasheet | 2SD414-INCHANGE.pdf |
|
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·With TO-126packaging ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed ·Complementary to 2SB548 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Relay drivers, high-speed inverters , converters and Other general high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.8 A ICP Collector Current-Pulse 1.5 A PC Collector Power Dissipation 1.0 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD414 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCBO Collector-Base Voltage IC=0.1mA, IE=0 VCEO Collector-Emitter Voltage IC=1mA, IB=0 VEBO VCE(sat) VBE(sat) Emitter-Base Voltage IE=0.1mA, IC=0 Collector-Emitter Voltage Saturation IC= 500mA;
IB=50mA Base-Emitter Saturation Voltage IC= 500mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD414 | NPN Transistor | NEC |
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|---|---|
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