Datasheet Details
| Part number | 2SD426 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.79 KB |
| Description | NPN Transistor |
| Datasheet | 2SD426-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistors.
| Part number | 2SD426 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.79 KB |
| Description | NPN Transistor |
| Datasheet | 2SD426-INCHANGE.pdf |
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High Power Dissipation- : PC= 100W(Max)@TC=25℃ ·Complement to Type 2SB556 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications.
·Recommended for high-fidelity audio frequency amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A IE Emitter Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 12 A 100 W 150 ℃ Tstg Storage Temperature -65~150 ℃ 2SD426 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD426 | (2SD425 / 2SD426) Silicon NPN Power Transistors | Savantic |
| Part Number | Description |
|---|---|
| 2SD424 | NPN Transistor |
| 2SD425 | NPN Transistor |
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| 2SD459 | NPN Transistor |
| 2SD460 | NPN Transistor |
| 2SD463 | NPN Transistor |
| 2SD470 | NPN Transistor |