2SD437 Description
·High Collector-Emitter Breakdown Voltage- : = V(BR)CEO 350V (Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power amplifier and switching regulator applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD437 TC=25℃ unless otherwise...