Datasheet Details
| Part number | 2SD492 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.44 KB |
| Description | NPN Transistor |
| Datasheet | 2SD492-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor isc Product Specification 2SD492.
| Part number | 2SD492 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.44 KB |
| Description | NPN Transistor |
| Datasheet | 2SD492-INCHANGE.pdf |
|
|
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·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A IB Base Current 7 A PC Collector Power Dissipation@TC=25℃ 115 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.52 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors isc Product Specification 2SD492 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA ;
IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A;
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