2SD492 Overview
·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors isc Product Specification 2SD492 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS...