Datasheet Details
| Part number | 2SD504 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 179.61 KB |
| Description | NPN Transistor |
| Datasheet | 2SD504-INCHANGE.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor.
| Part number | 2SD504 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 179.61 KB |
| Description | NPN Transistor |
| Datasheet | 2SD504-INCHANGE.pdf |
|
|
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·High DC current gain- hFE = 750 (Min) @ IC = 6A ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 60V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 12 A ICM Collector Current-Peak 20 A IB Base Current 0.2 A PC Collector Power Dissipation@TC=25℃ 150 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor 2SD504 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;
IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A;
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