Datasheet Details
| Part number | 2SD517 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 177.45 KB |
| Description | NPN Transistor |
| Datasheet | 2SD517-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD517.
| Part number | 2SD517 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 177.45 KB |
| Description | NPN Transistor |
| Datasheet | 2SD517-INCHANGE.pdf |
|
|
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· Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 700V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in large screen color deflection circuits .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEX Collector-Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=90℃ TJ Junction Temperature Tstg Storage Temperature 5 A 16 W 150 ℃ -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD517 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA;
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