Datasheet Details
| Part number | 2SD560 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.05 KB |
| Description | NPN Transistor |
| Datasheet | 2SD560-INCHANGE.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor 2SD560.
| Part number | 2SD560 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.05 KB |
| Description | NPN Transistor |
| Datasheet | 2SD560-INCHANGE.pdf |
|
|
|
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= 3.0A ·Low Saturation Voltage ·Complement to Type 2SB601 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifiers and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICP Collector Current-Peak 8 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 1.5 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA;, IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
IB= 3mA VBE(sat) Base-Emitter Saturation Voltage IC= 3A;
IB= 3mA ICBO Collector Cutoff Current VCB= 100V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD560 | NPN Transistor | NEC |
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2SD560 | Silicon NPN Power Transistors | Savantic |
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