Datasheet Details
| Part number | 2SD582 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.04 KB |
| Description | NPN Transistor |
| Datasheet | 2SD582-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD582 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.04 KB |
| Description | NPN Transistor |
| Datasheet | 2SD582-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max.)@ IC= 7A ·plement to Type 2SB612 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for 80~100W audio amplifier power output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 15 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD582 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| ETC | 2SD582A | Silicon NPN Transistor | ETC |
| Part Number | Description |
|---|---|
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| 2SD517 | NPN Transistor |
| 2SD529 | NPN Transistor |
| 2SD531 | NPN Transistor |
| 2SD533 | NPN Transistor |
| 2SD534 | NPN Transistor |