Datasheet Summary
isc Silicon NPN Power Transistor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min.)
- Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max.)@ IC= 7A
- plement to Type 2SB612
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for 80~100W audio amplifier power output...