Datasheet Details
| Part number | 2SD597 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 192.03 KB |
| Description | NPN Transistor |
| Datasheet | 2SD597-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD597.
| Part number | 2SD597 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 192.03 KB |
| Description | NPN Transistor |
| Datasheet | 2SD597-INCHANGE.pdf |
|
|
|
·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Excellent Safe Operating Area ·High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 8 A 60 W 150 ℃ -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD597 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
RBE= ∞ 100 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
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