Datasheet4U Logo Datasheet4U.com

2SD632 - NPN Transistor

Datasheet Summary

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min) Excellent Safe Operating Area 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line operated audio output amplifier,and switching p

📥 Download Datasheet

Datasheet preview – 2SD632

Datasheet Details

Part number 2SD632
Manufacturer INCHANGE
File Size 192.37 KB
Description NPN Transistor
Datasheet download datasheet 2SD632 Datasheet
Additional preview pages of the 2SD632 datasheet.

📁 Similar Datasheet

  • 2SD633 - NPN TRIPLE DIFFUSED TRANSISTOR (Toshiba Semiconductor)
  • 2SD633 - (2SD633 / 2SD635) SILICON POWER TRANSISTOR (SavantIC)
  • 2SD633P - PNP / NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SD634 - NPN Transistor (Toshiba)
  • 2SD635 - (2SD633 / 2SD635) SILICON POWER TRANSISTOR (SavantIC)
  • 2SD636 - (2SD636 / 2SD637) NPN Transistor (Panasonic)
  • 2SD637 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD637 - (2SD636 / 2SD637) NPN Transistor (Panasonic)
  • 2SD638 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD638 - Silicon PNP Transistor (Panasonic Semiconductor)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD632 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min) ·Excellent Safe Operating Area ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line operated audio output amplifier,and switching power supply drivers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2.5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 5 A 80 W 150 ℃ -65~150 ℃ isc website：www.iscsemi.
Published: |