Datasheet Details
| Part number | 2SD743 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.47 KB |
| Description | NPN Transistor |
| Datasheet | 2SD743-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor 2SD743.
| Part number | 2SD743 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.47 KB |
| Description | NPN Transistor |
| Datasheet | 2SD743-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 40~200 @IC= 0.5A ·Complement to Type 2SB703 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio frequency power amplifier, low speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 6 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 3.125 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD743 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD743 | SILICON POWER TRANSISTOR | SavantIC |
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2SD743A | SILICON POWER TRANSISTOR | SavantIC |
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