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2SD768 - NPN Transistor

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Description

High DC Current Gain- : hFE = 1000(Min)@ IC= 3A Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 3A Complement to Type 2SB727 Minimum Lot-to-Lot variations for robust device performance and reli

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Datasheet Details

Part number 2SD768
Manufacturer INCHANGE
File Size 202.04 KB
Description NPN Transistor
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isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD768 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 3A ·Complement to Type 2SB727 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Medium speed and power switching applications.
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