2SD768
2SD768 is NPN Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- High DC Current Gain-
: h FE = 1000(Min)@ IC= 3A
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 120V(Min)
- Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max)@ IC= 3A
- plement to Type 2SB727
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Medium speed and power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
℃
-55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS...
