2SD818 Overview
·High Collector-Base Breakdown Voltage- : V(BR)CBO= 1500V (Min.) ·Low Collector Saturation Voltage·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV horizontal output applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)...
