2SD822
DESCRIPTION
- High Breakdown Voltage-
: VCBO= 1500V (Min)
- High Switching Speed
- Low Collector Saturation Voltage-
: VCE(sat)= 5.0V(Max.)@ IC= 6A
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for color TV horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current- Continuous
Emitter Current- Continuous
Collector Power Dissipation @ TC≤90℃
Junction Temperature
℃
Tstg
Storage Temperature Range
-55~150
℃
2SD822 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power...
