| Part number | 2SD856 |
|---|---|
| Datasheet | 2SD856-INCHANGE.pdf |
| File Size | 209.37 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·plement to Type 2SB761 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF power amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
| ETC | 2SD856 | Si NPN Transistor | ETC |
| ETC | 2SD856A | Si NPN Transistor | ETC |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD855 | NPN Transistor |
| 2SD857 | Silicon NPN Power Transistor |
| 2SD858 | Silicon NPN Power Transistor |
| 2SD859 | NPN Transistor |
| 2SD800 | NPN Transistor |
| 2SD803 | NPN Transistor |
| 2SD807 | NPN Transistor |
| 2SD811 | NPN Transistor |
| 2SD812 | NPN Transistor |
| 2SD817 | NPN Transistor |
