Datasheet Details
| Part number | 2SD856 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.37 KB |
| Description | NPN Transistor |
| Datasheet | 2SD856-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD856 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.37 KB |
| Description | NPN Transistor |
| Datasheet | 2SD856-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB761 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 35 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD856 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| ETC | 2SD856 | Si NPN Transistor | ETC |
| ETC | 2SD856A | Si NPN Transistor | ETC |
| Part Number | Description |
|---|---|
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