Datasheet Details
| Part number | 2SD858 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.17 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD858-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor 2SD858.
| Part number | 2SD858 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.17 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD858-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·High Collector Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD858A | Si NPN Transistor | Panasonic Semiconductor |
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