| Part number | 2SD858 |
|---|---|
| Datasheet | 2SD858-INCHANGE.pdf |
| File Size | 217.17 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·High Collector Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF power amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD858A | Si NPN Transistor | Panasonic Semiconductor |
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