Datasheet Details
| Part number | 2SD959 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.14 KB |
| Description | NPN Transistor |
| Datasheet | 2SD959-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor 2SD959.
| Part number | 2SD959 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.14 KB |
| Description | NPN Transistor |
| Datasheet | 2SD959-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@IC= 2A ·Complement to Type 2SB867 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD959 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD959 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
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| 2SD953 | NPN Transistor |
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| 2SD957 | NPN Transistor |
| 2SD900 | NPN Transistor |
| 2SD904 | NPN Transistor |
| 2SD907 | NPN Transistor |
| 2SD909 | NPN Transistor |
| 2SD911 | NPN Transistor |