Inchange Semiconductor 2SJ170
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SJ170 |
|---|---|
| Datasheet | 2SJ170 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | P-Channel MOSFET Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Low Drain-Source ON Resistance●High Forward Transfer Admittance
●Low Leakage Current
●Enhancement-Mode
●Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS
●High speed switching application●Switching regulator ,DC-DC converter and Motor drive application
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) -80 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=37℃ -12 A Ptot Total Dissipation@TC=25℃ 50 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.1 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 75 ℃/W isc website： 1 isc & iscsemi is registered trademark isc P-Channel Mosfet Transistor INCHANGE Semiconductor 2SJ170●
ELECTRICAL CHARACTERISTICS
(TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=...