Inchange Semiconductor 2SJ376
P-Channel MOSFET Transistor
| Part No. | 2SJ376 |
|---|---|
| Datasheet | 2SJ376 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | P-Channel MOSFET Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Low Drain-Source ON Resistance●High Forward Transfer Admittance
●Low Leakage Current
●Enhancement-Mode
APPLICATIONS
●High speed switching application●Switching regulator ,DC-DC converter and Motor drive application
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) -60 V Gate-Source Voltage ±15 V Drain Current-continuous@ TC=37℃ -30 A Total Dissipation@TC=25℃ 50 W Max. Operating Junction Temperature 150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient 3.1 ℃/W 75 ℃/W isc website： 1 isc & iscsemi is registered trademark PDF pdfFactory Pro INCHANGE Semiconductor isc P-Channel Mosfet Transistor isc Product Specification 2SJ376●
ELECTRICAL CHARACTERISTICS
(TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= -1mA VGS(TH) Gate Threshold Voltage VDS= VGS...