Inchange Semiconductor 2SK1019
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SK1019 |
|---|---|
| Datasheet | 2SK1019 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Drain Current –ID=35A@ TC=25℃●Drain Source Voltage- : VDSS=450V(Min)
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 450 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 35 A Ptot Total Dissipation@TC=25℃ 300 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.416 ℃/W Rth j-a Thermal Resistance,Junction to Ambient ℃/W isc website： 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor●
ELECTRICAL CHARACTERISTICS
(TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=15A IGSS Gate Source Le...