Datasheet Details
| Part number | 2SK1105 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 229.67 KB |
| Description | N-Channel MOSFET |
| Datasheet | 2SK1105-INCHANGE.pdf |
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Overview: isc N-Channel MOSFET Transistor.
| Part number | 2SK1105 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 229.67 KB |
| Description | N-Channel MOSFET |
| Datasheet | 2SK1105-INCHANGE.pdf |
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·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulators, UPS,DC-DC converters , general purpose power amplifier applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 3 A IDM Drain Current-Single Plused 12 A Ptot Total Dissipation@TC=25℃ 80 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.56 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 35 ℃/W 2SK1105 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SK1105-R | N-Channel Silicon Power MOSFET | Fuji Electric |
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