Inchange Semiconductor 2SK1169
N-Channel MOSFET
| Part No. | 2SK1169 |
|---|---|
| Datasheet | 2SK1169 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●With TO-3P packaging●High speed switching
●Standard level gate drive
●Easy to use
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
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APPLICATIONS
●Power supply●Switching applications
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ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 450 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 20 IDM Drain Current-Single Pulsed 80 PD Total Dissipation 120 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 1.04 UNIT ℃/W 2SK1169 isc N-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=10mA VGS(off) Gate Threshold Voltage VDS=VGS; ID=10mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID=10A IGSS Gate-Source Leakage Current VGS= ±30V;VDS= 0V IDSS Dra...