Inchange Semiconductor 2SK1460
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SK1460 |
|---|---|
| Datasheet | 2SK1460 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Drain Current –ID=3.5A@ TC=25℃●Drain Source Voltage- : VDSS=900 (Min)
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VALUE UNI T 900 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 3.5 A Ptot Total Dissipation@TC=25℃ 40 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SK1460 isc website： 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor●
ELECTRICAL CHARACTERISTICS
(TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA VGS(th) Gate Threshold Voltage VDS=10V; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=2A IGSS Gate Source Leakage Current VGS= ±30V;V...