Datasheet Details
| Part number | 2SK1466 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 197.05 KB |
| Description | N-Channel MOSFET |
| Datasheet | 2SK1466-INCHANGE.pdf |
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Overview: isc N-Channel MOSFET Transistor 2SK1466.
| Part number | 2SK1466 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 197.05 KB |
| Description | N-Channel MOSFET |
| Datasheet | 2SK1466-INCHANGE.pdf |
|
|
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·Drain Current –ID=16A@ TC=25℃ ·Drain Source Voltage- : VDSS=900 (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VALUE UNI T 900 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 16 A Ptot Total Dissipation@TC=25℃ 250 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.25 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 35.0 ℃/W isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0;
ID= 10mA VGS(th) Gate Threshold Voltage VDS=10V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SK1466 | N-Channel Silicon MOSFET | Sanyo Semicon Device |
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