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2SK2180 - N-Channel MOSFET

General Description

Drain Current ID= 3A@ TC=25℃ Drain Source Voltage- : VDSS= 500V(Min) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching power amplifier High voltage power supply Inverter ABSOLUTE MAXIMUM

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isc N-Channel MOSFET Transistor 2SK2180 DESCRIPTION ·Drain Current ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power amplifier ·High voltage power supply ·Inverter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 3 A ID(puls) Pulse Drain Current 9 A Ptot Total Dissipation@TC=25℃ 40 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range ·THERMAL CHARACTERISTICS SYMBOL PARAMETER -55~150 ℃ MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.12 ℃/W isc website：www.iscsemi.