Datasheet Details
| Part number | 2SK2313 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 259.12 KB |
| Description | N-Channel MOSFET |
| Datasheet | 2SK2313-INCHANGE.pdf |
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Overview: isc N-Channel MOSFET Transistor.
| Part number | 2SK2313 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 259.12 KB |
| Description | N-Channel MOSFET |
| Datasheet | 2SK2313-INCHANGE.pdf |
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·Drain Current –ID=60A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for low voltage,high speed applications, ·Chopper regulator,DC-DC converter and motor drive applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 60 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.83 ℃/W 2SK2313 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SK2313 | Silicon N-Channel MOSFET | Toshiba Semiconductor |
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