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2SK2313 - N-Channel MOSFET

General Description

Drain Current ID=60A@ TC=25℃ Drain Source Voltage- : VDSS=60V(Min) Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for low voltage,high speed applica

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=60A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for low voltage,high speed applications, ·Chopper regulator,DC-DC converter and motor drive applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 60 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max.