Inchange Semiconductor 2SK2333
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SK2333 |
|---|---|
| Datasheet | 2SK2333 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Drain Current ID= 6A@ TC=25℃●Drain Source Voltage- : VDSS= 700V(Min)
●Fast Switching Speed
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Switching RegulatorsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 700 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 6 A ID(puls) Pulsed Drain Current 18 A Ptot Total Dissipation@TC=25℃ 50 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SK2333 isc website： 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor●
ELECTRICAL CHARACTERISTICS
(TC=25℃) 2SK2333 SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA VGS(th) Gate Threshold Voltage VDS= 10V; ID=1mA VSD Forward On-Voltage IS=3A; VGS=0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 3A IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 70...