Datasheet4U Logo Datasheet4U.com

2SK2645 - N-Channel MOSFET

Key Features

  • Drain Current ID= 9A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 600V(Min).
  • High speed Switching.
  • Repetitive Avalanche rated.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK2645-01MR N-channel MOS-FET Fuji Electric
2SK2645-01MR N-Channel 650V Power MOSFET VBsemi
2SK2640-01MR N-channel MOS-FET Fuji Electric
2SK2641-01 N-channel MOS-FET Fuji Electric
2SK2642-01MR N-Channel Silicon Power MOSFET Fuji Semiconductors

Other Datasheets by Inchange Semiconductor

Part Number Description
2SK2601 N-Channel MOSFET
2SK2608 N-Channel MOSFET
2SK2611 N-Channel MOSFET
2SK2652 N-Channel MOSFET
2SK2654 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor 2SK2645 ·FEATURES ·Drain Current ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·High speed Switching ·Repetitive Avalanche rated ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·DC-DC converter,Switching Regulators,General Purpose Power Amplifier ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 9 A PD Total Dissipation @TC=25℃ 50 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL PARAMETER -55~150 ℃ MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.