Inchange Semiconductor 2SK2652
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SK2652 |
|---|---|
| Datasheet | 2SK2652 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●Drain Source Voltage- : VDSS= 900V(Min)●Static Drain-Source On-Resistance : RDS(on) = 2.5Ω(Max)
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
DESCRIPTION
●Designed for use in switch mode power supplies and general purpose applications.●
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current-Continuous IDM Drain Current-Single Pulsed PD Total Dissipation Tj Operating Junction Temperature 900 V ±30 V 6 A 24 A 125 W -55~150 ℃ Tstg Storage Temperature -55~150 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 1 UNIT ℃/W isc website： 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor 2SK2652
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 1mA 900 V VGS(th) G...