Datasheet Details
| Part number | 2SK2886 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 230.08 KB |
| Description | N-Channel MOSFET |
| Datasheet | 2SK2886-INCHANGE.pdf |
|
|
Overview: isc N-Channel MOSFET Transistor.
| Part number | 2SK2886 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 230.08 KB |
| Description | N-Channel MOSFET |
| Datasheet | 2SK2886-INCHANGE.pdf |
|
|
|
·Drain Current –ID= 45A@ TC=25℃ ·Drain Source Voltage- : VDSS= 50V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·DC-DC converters ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 50 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 45 A ID(puls) Pulsed drain current 135 A Ptot Total Dissipation@TC=25℃ 40 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range ·THERMAL CHARACTERISTICS SYMBOL PARAMETER -55~150 ℃ MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.125 ℃/W 2SK2886 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID= 10mA VGS(th) Gate Threshold Voltage VDS= 10V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SK2886 | Silicon N-Channel MOSFET | Toshiba Semiconductor |
| Part Number | Description |
|---|---|
| 2SK2803 | N-Channel MOSFET |
| 2SK2842 | N-Channel MOSFET |
| 2SK2848 | N-Channel MOSFET |
| 2SK2850 | N-Channel MOSFET |
| 2SK2020-01MR | N-Channel MOSFET |
| 2SK2050 | N-Channel MOSFET |
| 2SK2071-01L | N-Channel MOSFET |
| 2SK2080 | N-Channel MOSFET |
| 2SK2180 | N-Channel MOSFET |
| 2SK2188 | N-Channel MOSFET |