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2SK3681 - N-Channel MOSFET

Key Features

  • Static Drain-Source On-Resistance : RDS(on) = 160mΩ(Max).
  • With low gate drive requirements.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 160mΩ(Max) ·With low gate drive requirements ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 43 IDM Drain Current-Single Pulsed 152 PD Total Dissipation 600 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.21 UNIT ℃/W 2SK3681 isc website：www.iscsemi.