2SK3681
FEATURES
- Static Drain-Source On-Resistance
: RDS(on) = 160mΩ(Max)
- With low gate drive requirements
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- APPLICATIONS
- Switching applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
±30
Drain Current-Continuous
Drain Current-Single Pulsed
Total Dissipation
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
- THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX 0.21
UNIT ℃/W
2SK3681 isc website：.iscsemi.cn
1 isc & iscsemi is registered trademark isc N-Channel MOSFET...
