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2SK3798 - N-Channel MOSFET

Datasheet Summary

Features

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  • Low drain-source on-resistance: RDS(on) ≤3.5Ω.
  • Enhancement mode: Vth = 2.0 to4.0V (VDS = 10 V, ID=1.0mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet Details

Part number 2SK3798
Manufacturer INCHANGE
File Size 235.56 KB
Description N-Channel MOSFET
Datasheet download datasheet 2SK3798 Datasheet
Additional preview pages of the 2SK3798 datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor 2SK3798，I2SK3798 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤3.5Ω. ·Enhancement mode: Vth = 2.0 to4.0V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 900 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 4 IDM Drain Current-Single Pulsed 12 PD Total Dissipation @TC=25℃ 40 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 3.
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