Datasheet4U Logo Datasheet4U.com

2SK4014 - N-Channel MOSFET

Key Features

  • br>.
  • Low drain-source on-resistance: RDS(on) ≤2.0Ω.
  • Enhancement mode: Vth = 2.0 to4.0V (VDS = 10 V, ID=1.0mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK4014 N-Channel MOSFET Toshiba Semiconductor
2SK4012 N-Channel MOSFET Toshiba Semiconductor
2SK4013 N-Channel MOSFET Toshiba Semiconductor
2SK4015 N-Channel MOSFET Toshiba Semiconductor
2SK4016 N-Channel MOSFET Toshiba Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
2SK4013 N-Channel MOSFET
2SK4094 N-Channel MOSFET
2SK4115 N-Channel MOSFET
2SK4145 N-Channel MOSFET
2SK4161D N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor 2SK4014，I2SK4014 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤2.0Ω. ·Enhancement mode: Vth = 2.0 to4.0V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·DC-DC Converter, Relay Drive and Motor Drive Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 900 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 6 IDM Drain Current-Single Pulsed 18 PD Total Dissipation @TC=25℃ 45 Tj Max.