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2SK787 Datasheet N-channel MOSFET

Manufacturer: Inchange Semiconductor

Overview: isc N-Channel MOSFET Transistor.

General Description

·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching power supplies,actuater control,and pulse circuits.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 900 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 8 A Ptot Total Dissipation@TC=25℃ 120 W Tj Max.

Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W 2SK787 isc website:.iscsemi.

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