Inchange Semiconductor 2SK962
N-Channel MOSFET Transistor
DESCRIPTION
●Drain Current –ID=8A@ TC=25℃●Drain Source Voltage- : VDSS=900V(Min)
APPLICATIONS
●Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 900 V Gate-Source Voltage ±30 V Drain Current-continuous@ TC=25℃ 8 A Total Dissipation@TC=25℃ 150 W Max. Operating Junction Temperature 150 ℃ Storage Temperature Range -55~150 ℃ isc website: 1 isc & iscsemi is registered trademark PDF pdfFactory Pro INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 2SK962●
ELECTRICAL CHARACTERISTICS
(TC=25℃) SYMBOL PARAMETER CONDITIONS (BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 1mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=4A IGSS Gate Source Leakage Current VGS= ±30V; VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=900V; VGS= 0 ton Turn-on time toff Turn-off time VGS=10V;ID=8A; RL=25Ω VSD Diode Forward Voltage IF=8A; VGS=0 MIN TYP.