With TO-3PN packaging
Very high DC current gain
Monolithic darlington transistor with integrated
antiparallel collector-emitter diode
Complement to Type 2STW100
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
AC-DC motor
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isc Silicon PNP Darlington Power Transistor
INCHANGE Semiconductor
2STW200
DESCRIPTION ·With TO-3PN packaging ·Very high DC current gain ·Monolithic darlington transistor with integrated
antiparallel collector-emitter diode ·Complement to Type 2STW100 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·AC-DC motor control ·Electronic ignition ·Alternator regulator
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-25
A
ICM
Collector Current-Peak
-40
A
IB
Base Current
-6
A
PC
Collector Power Dissipation
130
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperatur
2STW200 Datasheet
