2T837A datasheet by Inchange Semiconductor.
| Part number | 2T837A |
|---|---|
| Datasheet | 2T837A-INCHANGE.pdf |
| File Size | 208.94 KB |
| Manufacturer | Inchange Semiconductor |
| Description | PNP Transistor |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·With TO-220 packaging ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
| ETC | 2T837B | Transistor | ETC |
| ETC | 2T837E | Transistor | ETC |
| ETC | 2T837T | Transistor | ETC |
View all Inchange Semiconductor datasheets
| Part Number | Description |
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