Datasheet Details
| Part number | 2T837A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.94 KB |
| Description | PNP Transistor |
| Datasheet | 2T837A-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2T837A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.94 KB |
| Description | PNP Transistor |
| Datasheet | 2T837A-INCHANGE.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·With TO-220 packaging ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -5 A PC Total Power Dissipation@ TC=25℃ 80 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2T837A isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= -0.1mA;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| ETC | 2T837B | Transistor | ETC |
| ETC | 2T837E | Transistor | ETC |
| ETC | 2T837T | Transistor | ETC |
| Part Number | Description |
|---|