Inchange Semiconductor 2sc2433
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2sc2433 |
|---|---|
| Datasheet | 2sc2433 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V(Min)●High Current Capability
●Wide Area of Safe Operation
●Complement to Type 2SA1043
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Power switching applications●High frequency power amplifier
●Switching regulators
●DC-DC converters
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 30 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 150 W 175 ℃ Tstg Storage Temperature Range -65~175 ℃ 2SC2433 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA;...
