Inchange Semiconductor 30N12
N-Channel MOSFET Transistor
| Part No. | 30N12 |
|---|---|
| Datasheet | 30N12 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET Transistor |
| Buy | Stock & Price |
FEATURES
●Drain Current ID= 30A@ TC=25℃●Drain Source Voltage- : VDSS= 120V(Min)
●Static Drain-Source On-Resistance : RDS(on) = 0.075Ω(Max)
●Fast Switching
●
APPLICATIONS
●Switching power supplies,converters,AC and DC motor controls●
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 120 ±30 V V ID Drain Current-Continuous 30 A IDM Drain Current-Single Plused 100 A PD Total Dissipation @TC=25℃ 120 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.83 ℃/W isc website： 1 isc & iscsemi is registered trademark PDF pdfFactory Pro INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 30N12
●
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=1mA VGS(th) Gate Threshold Voltage VSD Dio...