Inchange Semiconductor 33N10
N-Channel MOSFET Transistor
| Part No. | 33N10 |
|---|---|
| Datasheet | 33N10 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET Transistor |
| Buy | Stock & Price |
FEATURES
● Static drain-source on-resistance: RDS(on) ≤60mΩ● Enhancement mode
● Fast Switching Speed
● 100% avalanche tested
● Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION
● Switching power supplies,converters,AC and DC motor controls
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 33 IDM Drain Current-Single Pulsed 132 PD Total Dissipation @TC=25℃ 150 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.0 62.5 UNIT ℃/W ℃/W 33N10 isc website： 1 isc & iscsemi is registered trademark isc N-Channel MOSFET TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =250μA VGS(th) Gat...