Inchange Semiconductor 36N06
N-Channel MOSFET Transistor
| Part No. | 36N06 |
|---|---|
| Datasheet | 36N06 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET Transistor |
| Buy | Stock & Price |
FEATURES
●Static drain-source on-resistance: RDS(on)≤40mΩ●Enhancement mode:
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●DESCRITION
●High current capability
●Low gate charge
●
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±15 ID Drain Current-Continuous 36 IDM Drain Current-Single Pulsed 144 PD Total Dissipation @TC=25℃ 120 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -65~175 UNIT V V A A W ℃ ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 1.25 62 UNIT ℃/W ℃/W 36N06 isc website： 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=0.25mA VGS(th) Gate Threshold Voltage VDS=VGS; ID=250μA RDS(on) Dra...