3CD834 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Low Collector-Emitter Saturation Voltage- : IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3.0A;.
3CD834 is PNP Transistor manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
| Dayan Technology Dayan Technology |
3CD834 | DIODE |
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Low Collector-Emitter Saturation Voltage- : IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3.0A;.