3CF20D Description
·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 3CF20D TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCEO Collector-Base Breakdown Voltage IC=-5mA ; IB=0 VCE(sat)-1 Collector-Emitter...