Inchange Semiconductor 3DA76
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 3DA76 |
|---|---|
| Datasheet | 3DA76 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High DC Current Gain- : hFE= 15(Max) @IC= 0.3A●Excellent Safe Operating Area
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use as an output device in complementary audio amplifiersABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 65 V VEBO Emitter-Base Voltage 4.0 V IC Collector Current-Continuous 0.5 A PC Collector Power Dissipation@TC=75℃ 7.5 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature Range -55-175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 5.0 UNIT ℃/W 3DA76 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(BR) Collector-Emitter Breakdown Voltage IC= 50mA; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB=0.1A ICBO Emitter Cutoff current VCE= 24V; IC=0 IEBO Emi...