Inchange Semiconductor 3DA882
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 3DA882 |
|---|---|
| Datasheet | 3DA882 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Collector Current-IC= 3.0A●Low Saturation Voltage - : VCE(sat)= 0.5V(Max)@ IC= 2.0A, IB= 0.2A
●Good Linearity of hFE
●Complement to Type 3CA772
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Suited for the output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3.0 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA ; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB=0 V(BR)EBO Emitter-B...