Datasheet Details
| Part number | 3DA98J |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 178.86 KB |
| Description | NPN Transistor |
| Datasheet | 3DA98J-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DA98J.
| Part number | 3DA98J |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 178.86 KB |
| Description | NPN Transistor |
| Datasheet | 3DA98J-INCHANGE.pdf |
|
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·J: High DC Current Gain- hFE: 30-50（1.5A/5V） ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as an output device in complementary audio amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 5 A PC Collector Power Dissipation@TC=25℃ 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55-150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 3.1 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DA98J ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(BR) Collector-Emitter Breakdown Voltage IC=10mA;
IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC=3A;
IB=0.6A ICBO Collector Cutoff Current VCB=60V;
| Part Number | Description |
|---|---|
| 3DA98 | NPN Transistor |
| 3DA98A | NPN Transistor |
| 3DA98B | NPN Transistor |
| 3DA27C | NPN Transistor |
| 3DA608 | NPN Transistor |