3DA98J Description
High DC Current Gain- hFE: 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DA98J TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(BR) Collector-Emitter Breakdown Voltage IC=10mA; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC=3A;.