Inchange Semiconductor 3DD102
Silicon NPN Power Transistor
| Part No. | 3DD102 |
|---|---|
| Datasheet | 3DD102 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.)●DC Current Gain- : hFE= 20(Min.)@IC= 2A
●Collector-Emitter Saturation Voltage- : VCE(sat)= 0.8V(Max)@ IC= 2.5A
APPLICATIONS
●Designed for power amplifier , DC Transform T-Shirt● SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 5A PC Collector Power Dissipation@TC=75℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 2.0 ℃/W isc website： 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 3DD102
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARA